Kingston 9965525-155.A00LF 8GB vs Crucial Technology CT8G4DFS824A.C8FBD1 8GB

总分

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

差异规格评论

差异

Kingston 9965525-155.A00LF 8GB

需要考虑的原因
Kingston 9965525-155.A00LF 8GB

报告一个错误

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.C8FBD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 69

左右 -123% 更低的延时
更快的读取速度，GB/s

15.7 6.4

测试中的平均数值
更快的写入速度，GB/s

11.4 3.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-155.A00LF 8GB

Crucial Technology CT8G4DFS824A.C8FBD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 31
读取速度，GB/s

6.4 15.7
写入速度，GB/s

3.7 11.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1129 2848

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-4000C19-4GTZ 4GB

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Micron Technology 16ATF2G64AZ-2G6H1 16GB

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CMK32GX4M2D3200C16 16GB

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Kingston 9965525-140.A00LF 8GB

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G Skill Intl F4-4133C19-8GTZKKF 8GB

G Skill Intl F4-4133C19-8GTZKKF 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905700-072.A01G 16GB

Kingston 9905700-072.A01G 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Corsair CMK16GX4M2F4500C19 8GB

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Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

SK Hynix HMA851S6AFR6N-UH 4GB

SK Hynix HMA851S6AFR6N-UH 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB