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Kingston 9965525-155.A00LF 8GB
Micron Technology 8ATF51264AZ-2G1A2 4GB

Kingston 9965525-155.A00LF 8GB vs Micron Technology 8ATF51264AZ-2G1A2 4GB

总分
star star star star star
Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1A2 4GB

Micron Technology 8ATF51264AZ-2G1A2 4GB

差异 规格 评论

差异

Kingston 9965525-155.A00LF 8GB 需要考虑的原因
Kingston 9965525-155.A00LF 8GB
报告一个错误
Micron Technology 8ATF51264AZ-2G1A2 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A2 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 69
    左右 -92% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 3.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 9965525-155.A00LF 8GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 36
  • 读取速度，GB/s
    6.4 left arrow 15.8
  • 写入速度，GB/s
    3.7 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1129 left arrow 2417

Kingston 9965525-155.A00LF 8GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Samsung M391B5773DH0-CK0 2GB

Micron Technology 8ATF51264AZ-2G1A2 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
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内存RAM
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内存RAM
Samsung M471B5273CH0-CH9 4GB
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SK Hynix HYMP112U64CP8-S5 1GB
Kingston 9905701-010.A00G 16GB
Kingston 9905701-010.A00G 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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内存RAM
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Crucial Technology CB16GS2666.C8ET 16GB
Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
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SK Hynix HMAA4GU6AJR8N-VK 32GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
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Essencore Limited KD48GS88A-26N1600 8GB
内存RAM