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Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3000C15-8GRBB 8GB

Kingston 99U5429-007.A00LF 2GB vs G Skill Intl F4-3000C15-8GRBB 8GB

总分
star star star star star
Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

总分
star star star star star
G Skill Intl F4-3000C15-8GRBB 8GB

G Skill Intl F4-3000C15-8GRBB 8GB

差异 规格 评论

差异

Kingston 99U5429-007.A00LF 2GB 需要考虑的原因
Kingston 99U5429-007.A00LF 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,036.1 left arrow 12.2
    测试中的平均数值
G Skill Intl F4-3000C15-8GRBB 8GB 需要考虑的原因
G Skill Intl F4-3000C15-8GRBB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 75
    左右 -114% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3000C15-8GRBB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 35
  • 读取速度，GB/s
    3,986.4 left arrow 16.0
  • 写入速度，GB/s
    2,036.1 left arrow 12.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    714 left arrow 3112

Kingston 99U5429-007.A00LF 2GB RAM的比较

Samsung M378T5663DZ3-CF7 2GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

G Skill Intl F4-3000C15-8GRBB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3600C16-8GTZKK 8GB
G Skill Intl F4-3600C16-8GTZKK 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
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G Skill Intl F4-3600C19-8GSXW 8GB
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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMT32GX4M4C3200C14 8GB
Corsair CMT32GX4M4C3200C14 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-3466C16-8GTZSK 8GB
G Skill Intl F4-3466C16-8GTZSK 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
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Kingston K1CXP8-MIE 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Chun Well Technology Holding Limited D4U0830160B 8GB
内存RAM
SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
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Kingston 9965662-012.A01G 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Corsair CMK128GX4M8B3200C16 16GB
Corsair CMK128GX4M8B3200C16 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
MemxPro Inc. D4S8GHIOFFC 8GB
MemxPro Inc. D4S8GHIOFFC 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KHX3733C19D4/16GX 16GB
Kingston KHX3733C19D4/16GX 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
内存RAM