Kingston 99U5458-008.A00LF 4GB vs EVGA 16G-D4-2800-MR 4GB

总分

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

总分

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

差异规格评论

差异

Kingston 99U5458-008.A00LF 4GB

需要考虑的原因
Kingston 99U5458-008.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 31% 更低的延时
更快的读取速度，GB/s

13.3 13.2

测试中的平均数值

EVGA 16G-D4-2800-MR 4GB

需要考虑的原因
EVGA 16G-D4-2800-MR 4GB

报告一个错误

更快的写入速度，GB/s

9.4 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5458-008.A00LF 4GB

EVGA 16G-D4-2800-MR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 39
读取速度，GB/s

13.3 13.2
写入速度，GB/s

9.1 9.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2324 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair VS1GB800D2 1GB

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SK Hynix HMA41GR7AFR8N-UH 8GB

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Crucial Technology CT16G4SFD8213.M16FA 16GB

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Samsung M386B4G70DM0-CMA4 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB

Samsung M378B5673EH1-CF8 2GB

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Samsung M393A2K43BB1-CPB 16GB

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Corsair CMSX64GX4M4A2666C18 16GB