Kingston 99U5471-012.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Kingston 99U5471-012.A00LF 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

总分

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

差异规格评论

差异

Kingston 99U5471-012.A00LF 4GB

需要考虑的原因
Kingston 99U5471-012.A00LF 4GB

报告一个错误

更快的写入速度，GB/s

7.5 6.3

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 41

左右 -71% 更低的延时
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-012.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 24
读取速度，GB/s

12.7 12.7
写入速度，GB/s

7.5 6.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2039 2256

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A2K43CB1-CTD 16GB

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