Kingston 99U5471-012.A00LF 4GB vs Kingston LV32D4S2S8HD-8 8GB

总分

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

总分

Kingston LV32D4S2S8HD-8 8GB

Kingston LV32D4S2S8HD-8 8GB

差异规格评论

差异

Kingston 99U5471-012.A00LF 4GB

需要考虑的原因
Kingston 99U5471-012.A00LF 4GB

报告一个错误

Kingston LV32D4S2S8HD-8 8GB

需要考虑的原因
Kingston LV32D4S2S8HD-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 41

左右 -41% 更低的延时
更快的读取速度，GB/s

16.2 12.7

测试中的平均数值
更快的写入速度，GB/s

12.0 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5471-012.A00LF 4GB

Kingston LV32D4S2S8HD-8 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 29
读取速度，GB/s

12.7 16.2
写入速度，GB/s

7.5 12.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2039 2950

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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最新比较

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Crucial Technology BL8G36C16U4WL.M8FE1 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CM4X16GE2400C14K4 16GB

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PNY Electronics PNY 2GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Transcend Information TS512MSK64W6H 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

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SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

Wilk Elektronik S.A. GR2666S464L19/16G 16GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Crucial Technology BL16G26C16S4B.16FD 16GB

Crucial Technology BL16G26C16S4B.16FD 16GB

SK Hynix HMT351R7EFR8C-RD 4GB

SK Hynix HMT351R7EFR8C-RD 4GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB

Wilk Elektronik S.A. IR2133D464L15S/8G 8GB