Kingston 99U5474-013.A00LF 2GB vs Smart Modular SF4641G8CK8I6GKSEG 8GB

总分

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

总分

Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

差异规格评论

差异

Kingston 99U5474-013.A00LF 2GB

需要考虑的原因
Kingston 99U5474-013.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时

Smart Modular SF4641G8CK8I6GKSEG 8GB

需要考虑的原因
Smart Modular SF4641G8CK8I6GKSEG 8GB

报告一个错误

更快的读取速度，GB/s

16.7 10

测试中的平均数值
更快的写入速度，GB/s

13.4 5.7

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-013.A00LF 2GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

10.0 16.7
写入速度，GB/s

5.7 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1435 3008

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMU32GX4M4C3200C16 8GB

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Kingston KF3200C20S4/16G 16GB

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Kingston ACR256X64D3S1333C9 2GB

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Avant Technology J642GU42J5213N1 16GB

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Corsair CML8GX3M2A1600C9 4GB

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AMD R748G2400U2S-UO 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6MFR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology CT16G4S24AM.M16FB 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMK16GX4M2A2666C16 8GB

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AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB