Kingston 99U5474-028.A00LF 4GB vs G Skill Intl F4-3200C14-8GTZRX 8GB

总分

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

总分

G Skill Intl F4-3200C14-8GTZRX 8GB

G Skill Intl F4-3200C14-8GTZRX 8GB

差异规格评论

差异

Kingston 99U5474-028.A00LF 4GB

需要考虑的原因
Kingston 99U5474-028.A00LF 4GB

报告一个错误

G Skill Intl F4-3200C14-8GTZRX 8GB

需要考虑的原因
G Skill Intl F4-3200C14-8GTZRX 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 39

左右 -77% 更低的延时
更快的读取速度，GB/s

20.3 12.6

测试中的平均数值
更快的写入速度，GB/s

17.2 6.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3200C14-8GTZRX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 22
读取速度，GB/s

12.6 20.3
写入速度，GB/s

6.8 17.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1954 4116

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited D4U1636181DC 16GB

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Samsung M471A4G43MB1-CTD 32GB

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Kingston 9965525-155.A00LF 8GB

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Nanya Technology NT1GT64U88D0BY-AD 1GB

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Corsair CMK32GX5M2B5600C36 16GB

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SK Hynix GKE160UD102408-2133 16GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

SK Hynix HMA84GR7AFR4N-VK 32GB

SK Hynix HMA84GR7AFR4N-VK 32GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-3200C15-8GVK 8GB

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Samsung M471B5273EB0-CK0 4GB

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Crucial Technology CT8G4DFS8213.C8FBD1 8GB

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Kingston 99U5471-020.A00LF 4GB

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SK Hynix HMA82GS6AFRFR-UH 16GB

SK Hynix HMA82GS6AFRFR-UH 16GB