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Kingston 99U5474-037.A00LF 4GB
Samsung M378B5173DB0-CK0 4GB

Kingston 99U5474-037.A00LF 4GB vs Samsung M378B5173DB0-CK0 4GB

总分
star star star star star
Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

总分
star star star star star
Samsung M378B5173DB0-CK0 4GB

Samsung M378B5173DB0-CK0 4GB

差异 规格 评论

差异

Kingston 99U5474-037.A00LF 4GB 需要考虑的原因
Kingston 99U5474-037.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 42
    左右 12% 更低的延时
Samsung M378B5173DB0-CK0 4GB 需要考虑的原因
Samsung M378B5173DB0-CK0 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13.8 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Kingston 99U5474-037.A00LF 4GB
Samsung M378B5173DB0-CK0 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    37 left arrow 42
  • 读取速度，GB/s
    13.7 left arrow 13.8
  • 写入速度，GB/s
    7.8 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2102 left arrow 2187

Kingston 99U5474-037.A00LF 4GB RAM的比较

Kingston 99U5584-007.A00LF 4GB
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5173DB0-CK0 4GB RAM的比较

Crucial Technology BL51264BA160A.16FH 4GB
Samsung M378B5273CH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMW64GX4M4A2666C16 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
Crucial Technology BLE8G4D40BEEAK.M8FE1 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Samsung M378B5173DB0-CK0 4GB
Samsung M378B5173DB0-CK0 4GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
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Golden Empire CL16-18-18 D4-3400 4GB
Golden Empire CL16-18-18 D4-3400 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
Crucial Technology BLS16G4D26BFSE.16FD 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
Gold Key Technology Co Ltd NMUD416E82-3000D 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Apacer Technology GD2.1831WS.001 16GB
Apacer Technology GD2.1831WS.001 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
内存RAM
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SK Hynix HMT41GU7BFR8A-PB 8GB
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Essencore Limited KD4AGS88C-26N1900 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
内存RAM