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Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3466C18-8GSXW 8GB

Kingston 99U5584-001.A00LF 4GB vs G Skill Intl F4-3466C18-8GSXW 8GB

总分
star star star star star
Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

总分
star star star star star
G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

差异 规格 评论

差异

Kingston 99U5584-001.A00LF 4GB 需要考虑的原因
Kingston 99U5584-001.A00LF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 71
    左右 61% 更低的延时
G Skill Intl F4-3466C18-8GSXW 8GB 需要考虑的原因
G Skill Intl F4-3466C18-8GSXW 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 71
  • 读取速度，GB/s
    11.5 left arrow 16.2
  • 写入速度，GB/s
    6.7 left arrow 8.1
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1857 left arrow 1979

Kingston 99U5584-001.A00LF 4GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905474-043.A00LF 4GB

G Skill Intl F4-3466C18-8GSXW 8GB RAM的比较

SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
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Kingston 99U5471-020.A00LF 4GB
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Mushkin 99[2/7/4]189F 4GB
内存RAM
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EXCELERAM D48G8G8H8SS9CJRB22 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
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Team Group Inc. TEAMGROUP-UD4-2400 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
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G Skill Intl F4-3000C16-16GISB 16GB
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G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
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Corsair CMK32GX4M4B3733C17 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Mushkin MR[ABC]4U266GHHF8G 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Transcend Information JM3200HLB-8G 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-16GTRS 16GB
G Skill Intl F4-3200C16-16GTRS 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
Crucial Technology CT4G4DFS8213.C8FAR2 4GB
内存RAM
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Samsung M471B1G73QH0-YK0 8GB
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Kingston 9905702-006.A00G 8GB
内存RAM
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Kingston 99P5471-002.A00LF 2GB
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Corsair CM4X16GE2666C16K8 16GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
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Micron Technology 8ATF51264AZ-2G1A2 4GB
内存RAM