Kingston 99U5584-004.A00LF 4GB vs Crucial Technology CT8G4SFS8213.C8FAD1 8GB

总分

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

总分

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

差异规格评论

差异

Kingston 99U5584-004.A00LF 4GB

需要考虑的原因
Kingston 99U5584-004.A00LF 4GB

报告一个错误

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8213.C8FAD1 8GB

报告一个错误

更快的读取速度，GB/s

14.4 13.1

测试中的平均数值
更快的写入速度，GB/s

10.6 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston 99U5584-004.A00LF 4GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.1 14.4
写入速度，GB/s

7.7 10.6
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2009 2509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673EH1-CH9 2GB

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Samsung M393B2G70BH0-CH9 16GB

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Micron Technology 8ATF1G64AZ-3G2R1 8GB

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Kingston KP223C-ELD 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

SK Hynix HMA81GU6JJR8N-VK 8GB

SK Hynix HMA81GU6JJR8N-VK 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

Essencore Limited KD4AGS88A-26N1600 16GB

Essencore Limited KD4AGS88A-26N1600 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

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Corsair CMH16GX4M2E3200C16 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

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Crucial Technology BL8G36C16U4BL.M8FE1 8GB