Kingston ACR16D3LS1KBG/8G 8GB vs Kingmax Semiconductor GSLG42F-18---------- 8GB

总分

Kingston ACR16D3LS1KBG/8G 8GB

Kingston ACR16D3LS1KBG/8G 8GB

总分

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

差异规格评论

差异

Kingston ACR16D3LS1KBG/8G 8GB

需要考虑的原因
Kingston ACR16D3LS1KBG/8G 8GB

报告一个错误

低于PassMark测试中的延时，ns

50 99

左右 49% 更低的延时
更快的写入速度，GB/s

7.8 6.9

测试中的平均数值

Kingmax Semiconductor GSLG42F-18---------- 8GB

需要考虑的原因
Kingmax Semiconductor GSLG42F-18---------- 8GB

报告一个错误

更快的读取速度，GB/s

14.2 10.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KBG/8G 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

50 99
读取速度，GB/s

10.6 14.2
写入速度，GB/s

7.8 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1899 1499

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3200C16D4/16GX 16GB

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SK Hynix HMT41GS6BFR8A-PB 8GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Samsung M471A1K43CBCBCRC 8GB

Samsung M471A1K43CBCBCRC 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-4000C16-16GTZRA 16GB

G Skill Intl F4-4000C16-16GTZRA 16GB