Kingston ACR16D3LS1KNG/4G 4GB vs G Skill Intl F4-2400C14-16GVK 16GB

总分

Kingston ACR16D3LS1KNG/4G 4GB

Kingston ACR16D3LS1KNG/4G 4GB

总分

G Skill Intl F4-2400C14-16GVK 16GB

G Skill Intl F4-2400C14-16GVK 16GB

差异规格评论

差异

Kingston ACR16D3LS1KNG/4G 4GB

需要考虑的原因
Kingston ACR16D3LS1KNG/4G 4GB

报告一个错误

G Skill Intl F4-2400C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-2400C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 -7% 更低的延时
更快的读取速度，GB/s

18.1 12.5

测试中的平均数值
更快的写入速度，GB/s

13.5 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1KNG/4G 4GB

G Skill Intl F4-2400C14-16GVK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 28
读取速度，GB/s

12.5 18.1
写入速度，GB/s

7.8 13.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1917 3536

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16KTF1G64HZ-1G9E2 8GB

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Kingston KHX16LC9/8GX 8GB

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Hewlett-Packard 7EH61AA# 8GB

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Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

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Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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Corsair CML8GX3M2A1600C9 4GB

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SK Hynix HMT351U7CFR8C-PB 4GB

SK Hynix HMT351U7CFR8C-PB 4GB

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Gloway International Co. Ltd. TYA4U2666D19321C 32GB