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Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMN32GX4M2Z3600C18 16GB

Kingston ACR16D3LS1NGG/2G 2GB vs Corsair CMN32GX4M2Z3600C18 16GB

总分
star star star star star
Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分
star star star star star
Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

差异 规格 评论

差异

Kingston ACR16D3LS1NGG/2G 2GB 需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB
报告一个错误
Corsair CMN32GX4M2Z3600C18 16GB 需要考虑的原因
Corsair CMN32GX4M2Z3600C18 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    45 left arrow 84
    左右 -87% 更低的延时
  • 更快的读取速度，GB/s
    19.7 left arrow 5
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 12800
    左右 2 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMN32GX4M2Z3600C18 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    84 left arrow 45
  • 读取速度，GB/s
    5.0 left arrow 19.7
  • 写入速度，GB/s
    3.6 left arrow 15.5
  • 内存带宽，mbps
    12800 left arrow 25600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    878 left arrow 3240

Kingston ACR16D3LS1NGG/2G 2GB RAM的比较

Kingston 99U5469-053.A00LF 4GB
EVGA 8GX-D4-3200-MR 8GB

Corsair CMN32GX4M2Z3600C18 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT2K102464BD160B 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Corsair CMW32GX4M2D3600C18 16GB
Corsair CMW32GX4M2D3600C18 16GB
内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
Micron Technology AFLD44EK2P 4GB
Micron Technology AFLD44EK2P 4GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Corsair CMN32GX4M2Z3600C18 16GB
Corsair CMN32GX4M2Z3600C18 16GB
内存RAM
Lexar Co Limited LD4AU016G-H3200GST 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Kingston KHX2666C16D4/32GX 32GB
Kingston KHX2666C16D4/32GX 32GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston 9905702-119.A00G 8GB
Kingston 9905702-119.A00G 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
Crucial Technology BLE4G4D26AFEA.8FADG 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Corsair CM4X8GF2666C18S2 8GB
Corsair CM4X8GF2666C18S2 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston CAC24D4S7D8MB-16 16GB
Kingston CAC24D4S7D8MB-16 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMK32GX4M4C3400C16 8GB
Corsair CMK32GX4M4C3400C16 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
MDT Technologies GmbH MDT 512M DDR2-66 512MB
MDT Technologies GmbH MDT 512M DDR2-66 512MB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Avant Technology J642GU42J5213N4 16GB
Avant Technology J642GU42J5213N4 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMT64GX4M8C3200C16 8GB
Corsair CMT64GX4M8C3200C16 8GB
内存RAM