Kingston ACR16D3LS1NGG/2G 2GB vs Crucial Technology CB4GU2400.M8E 4GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

Crucial Technology CB4GU2400.M8E 4GB

需要考虑的原因
Crucial Technology CB4GU2400.M8E 4GB

报告一个错误

低于PassMark测试中的延时，ns

71 84

左右 -18% 更低的延时
更快的读取速度，GB/s

14.8 5

测试中的平均数值
更快的写入速度，GB/s

7.9 3.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

Crucial Technology CB4GU2400.M8E 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 71
读取速度，GB/s

5.0 14.8
写入速度，GB/s

3.6 7.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

878 1799

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CF7 2GB

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Corsair CMK16GX4M2A2400C14 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Micron Technology 16ATF1G64HZ-2G1B1 8GB

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Kingston 9905403-444.A00LF 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

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SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Corsair CMK4GX4M1A2400C16 4GB

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A-DATA Technology DDR4 3000 8GB

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