Kingston ACR16D3LS1NGG/2G 2GB vs Crucial Technology CT8G4SFS632A.C4FE 8GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

Crucial Technology CT8G4SFS632A.C4FE 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

Crucial Technology CT8G4SFS632A.C4FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFS632A.C4FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 84

左右 -62% 更低的延时
更快的读取速度，GB/s

13.7 5

测试中的平均数值
更快的写入速度，GB/s

9.1 3.6

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 52
读取速度，GB/s

5.0 13.7
写入速度，GB/s

3.6 9.1
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

878 2182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G6B1 8GB

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Kingston XRGM6C-MIE 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMD16GX4M2B3866C18 8GB

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Crucial Technology BLS8G4D32AESBK.M8FE 8GB

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Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

G Skill Intl F4-3600C17-16GTZKW 16GB

Kingston 99U5403-465.A00LF 8GB

Kingston 99U5403-465.A00LF 8GB

G Skill Intl F4-3200C16-16GTZKO 16GB

G Skill Intl F4-3200C16-16GTZKO 16GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMK32GX4M4K4266C19 8GB

Corsair CMK32GX4M4K4266C19 8GB