Kingston ACR16D3LS1NGG/2G 2GB vs G Skill Intl F4-4266C19-8GTZKW 8GB

总分

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分

G Skill Intl F4-4266C19-8GTZKW 8GB

G Skill Intl F4-4266C19-8GTZKW 8GB

差异规格评论

差异

Kingston ACR16D3LS1NGG/2G 2GB

需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB

报告一个错误

G Skill Intl F4-4266C19-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-4266C19-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

35 84

左右 -140% 更低的延时
更快的读取速度，GB/s

16.5 5

测试中的平均数值
更快的写入速度，GB/s

14.8 3.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston ACR16D3LS1NGG/2G 2GB

G Skill Intl F4-4266C19-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

84 35
读取速度，GB/s

5.0 16.5
写入速度，GB/s

3.6 14.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT8G4DFRA266.C8FE 8GB

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Samsung M471B5773DH0-CK0 2GB

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Samsung M3 78T2953EZ3-CF7 1GB

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G Skill Intl F4-2666C15-4GVR 4GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB

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Samsung M378B5673EH1-CF8 2GB

Corsair CMD16GX4M4B2400C10 4GB

Corsair CMD16GX4M4B2400C10 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

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Corsair CMK32GX4M4B3000C15 8GB

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Samsung M378B5773DH0-CH9 2GB

Corsair CMK64GX4M2Z4000C18 32GB

Corsair CMK64GX4M2Z4000C18 32GB