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Kingston ACR16D3LS1NGG/2G 2GB
Transcend Information TS2GSH64V6B 16GB

Kingston ACR16D3LS1NGG/2G 2GB vs Transcend Information TS2GSH64V6B 16GB

总分
star star star star star
Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

总分
star star star star star
Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

差异 规格 评论

差异

Kingston ACR16D3LS1NGG/2G 2GB 需要考虑的原因
Kingston ACR16D3LS1NGG/2G 2GB
报告一个错误
Transcend Information TS2GSH64V6B 16GB 需要考虑的原因
Transcend Information TS2GSH64V6B 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 84
    左右 -265% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.4 left arrow 3.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston ACR16D3LS1NGG/2G 2GB
Transcend Information TS2GSH64V6B 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    84 left arrow 23
  • 读取速度，GB/s
    5.0 left arrow 16.4
  • 写入速度，GB/s
    3.6 left arrow 14.4
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    878 left arrow 2978

Kingston ACR16D3LS1NGG/2G 2GB RAM的比较

Kingston 99U5469-053.A00LF 4GB
EVGA 8GX-D4-3200-MR 8GB

Transcend Information TS2GSH64V6B 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905624-007.A00G 8GB
Kingston 9905624-007.A00G 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Transcend Information TS2GSH64V6B 16GB
Transcend Information TS2GSH64V6B 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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Micron Technology AFLD44EK2P 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology CT16G4DFD824A.C16FE 16GB
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内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
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SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
G Skill Intl F4-3600C14-8GTZN 8GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
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Apacer Technology 78.D2GG7.AU30B 16GB
内存RAM
A-DATA Technology AX5U6000C4016G-B 16GB
A-DATA Technology AX5U6000C4016G-B 16GB
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Kingston KF560C40-16 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
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Crucial Technology CT16G4SFRA266.M16FR 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM