Kingston ACR256X64D3S1333C9 2GB vs Corsair CMN32GX4M2Z3200C16 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Corsair CMN32GX4M2Z3200C16 16GB

Corsair CMN32GX4M2Z3200C16 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Corsair CMN32GX4M2Z3200C16 16GB

需要考虑的原因
Corsair CMN32GX4M2Z3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

17.2 11.9

测试中的平均数值
更快的写入速度，GB/s

15.3 8.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Corsair CMN32GX4M2Z3200C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

11.9 17.2
写入速度，GB/s

8.5 15.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1620 3692

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C18-32GRS 32GB

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Samsung M391B5673EH1-CH9 2GB

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Apacer Technology 78.BAGNF.40C0B 4GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston XJV223-MIE-NX 16GB

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AMD R744G2400U1S-UO 4GB

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Samsung M378B5273DH0-CH9 4GB

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Kingston 9965525-155.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMW32GX4M2E3200C16 16GB

Corsair CMW32GX4M2E3200C16 16GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Maxsun MSD44G24Q3 4GB

Maxsun MSD44G24Q3 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB