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Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology BLS8G4D240FSA.16FAD 8GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Crucial Technology BLS8G4D240FSA.16FAD 8GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 36
    左右 25% 更低的延时
Crucial Technology BLS8G4D240FSA.16FAD 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FAD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.6 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 36
  • 读取速度，GB/s
    11.9 left arrow 13.6
  • 写入速度，GB/s
    8.5 left arrow 10.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 2690

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Corsair CMV16GX4M1A2133C15 16GB
Corsair CMV16GX4M1A2133C15 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905624-036.A00G 8GB
Kingston 9905624-036.A00G 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3466C16-16GTZSW 16GB
G Skill Intl F4-3466C16-16GTZSW 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Micron Technology AFLD44EK2P 4GB
Micron Technology AFLD44EK2P 4GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMK128GX4M8A2133C13 16GB
Corsair CMK128GX4M8A2133C13 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
EVGA 8GX-D4-3200-MR 8GB
EVGA 8GX-D4-3200-MR 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
内存RAM