Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology CT16G4DFD8213.C16FDD 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Crucial Technology CT16G4DFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FDD 16GB

报告一个错误

更快的读取速度，GB/s

14.7 11.9

测试中的平均数值
更快的写入速度，GB/s

9.2 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

11.9 14.7
写入速度，GB/s

8.5 9.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston KF552C40-16 16GB

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Crucial Technology BLT4G3D1337DT1TX0. 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston 9905701-011.A00G 16GB

Kingston 9905701-011.A00G 16GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Kingston KHX2133C14/16G 16GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLM16G44C19U4B.M8FB1 16GB

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Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

Corsair CMK64GX4M4D3600C18 16GB

Corsair CMK64GX4M4D3600C18 16GB