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Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Kingston ACR256X64D3S1333C9 2GB vs Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB 需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 26
  • 读取速度，GB/s
    11.9 left arrow 18.9
  • 写入速度，GB/s
    8.5 left arrow 16.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 3866

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Gold Key Technology Co Ltd NMUD416E82-3200D 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
Gold Key Technology Co Ltd NMUD416E82-3200D 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair MK16GX44A2666C16 4GB
Corsair MK16GX44A2666C16 4GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Kingston 9905630-033.A00G 16GB
Kingston 9905630-033.A00G 16GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
Crucial Technology CT16G4SFS832A.M8FB 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung M474A2K43BB1-CPB 16GB
Samsung M474A2K43BB1-CPB 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9932301-P01.A00G 4GB
Kingston 9932301-P01.A00G 4GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Avant Technology J642GU42J5213N1 16GB
Avant Technology J642GU42J5213N1 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43BB1-CRC 8GB
Samsung M471A1K43BB1-CRC 8GB
内存RAM