Kingston ACR256X64D3S1333C9 2GB vs Golden Empire CL14-16-16 D4-3000 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Golden Empire CL14-16-16 D4-3000 4GB

需要考虑的原因
Golden Empire CL14-16-16 D4-3000 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 27

左右 -29% 更低的延时
更快的读取速度，GB/s

17.7 11.9

测试中的平均数值
更快的写入速度，GB/s

13.1 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Golden Empire CL14-16-16 D4-3000 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 21
读取速度，GB/s

11.9 17.7
写入速度，GB/s

8.5 13.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2833

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B5270CH0-CH9 4GB

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Apacer Technology 78.01GA0.9K5 1GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Kllisre M471A3243BB0-CP50 16GB

Kllisre M471A3243BB0-CP50 16GB

Samsung M471B5173QH0-YK0 4GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Kingston 9905471-006.A00LF 4GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

Ramaxel Technology RMSA3260MB78HAF2400 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N