Kingston ACR256X64D3S1333C9 2GB vs Golden Empire CL16-16-16 D4-3200 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Golden Empire CL16-16-16 D4-3200 4GB

Golden Empire CL16-16-16 D4-3200 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Golden Empire CL16-16-16 D4-3200 4GB

需要考虑的原因
Golden Empire CL16-16-16 D4-3200 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

18.6 11.9

测试中的平均数值
更快的写入速度，GB/s

14.3 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Golden Empire CL16-16-16 D4-3200 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

11.9 18.6
写入速度，GB/s

8.5 14.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 3413

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT351U6CFR8C-H9 4GB

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Corsair CMD32GX4M4C3200C16 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Micron Technology 16ATF2G64HZ-2G3B1 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Avant Technology J642GU42J7240NF 16GB

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PNY Electronics PNY 2GB

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Samsung M3 78T2863EHS-CF7 1GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Crucial Technology CT51264BA1339.C16F 4GB

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Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Apacer Technology 78.C1GMM.DFW0C 8GB

Apacer Technology 78.C1GMM.DFW0C 8GB