Kingston ACR256X64D3S1333C9 2GB vs Kingston 9965662-015.A00G 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Kingston 9965662-015.A00G 16GB

Kingston 9965662-015.A00G 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时
更快的读取速度，GB/s

11.9 10.9

测试中的平均数值
更快的写入速度，GB/s

8.5 5.3

测试中的平均数值

Kingston 9965662-015.A00G 16GB

需要考虑的原因
Kingston 9965662-015.A00G 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Kingston 9965662-015.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

11.9 10.9
写入速度，GB/s

8.5 5.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 1874

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT32GX4M2C3200C16 16GB

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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A-DATA Technology VDQVE1B16 2GB

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Smart Modular SF4641G8CKHIWDFSEG 8GB

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Teikon TMA81GU6AFR8N-UHSC 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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SK Hynix HMA41GR7AFR8N-TF 8GB

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Samsung M378B1G73QH0-CK0 8GB

Samsung M378B1G73QH0-CK0 8GB

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Samsung M378B5673EH1-CF8 2GB

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Crucial Technology CT8G4DFS832A.M8FJ 8GB

Crucial Technology CT8G4DFS832A.M8FJ 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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