Kingston ACR256X64D3S1333C9 2GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E1 4GB

报告一个错误

更快的读取速度，GB/s

14.8 11.9

测试中的平均数值
更快的写入速度，GB/s

10.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

11.9 14.8
写入速度，GB/s

8.5 10.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SpecTek Incorporated ?????????????????? 2GB

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Kingston 9905458-026.A00LF 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Nanya Technology M471A5143EB1-CRC 4GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

Corsair CMSO32GX4M2A2133C15 16GB

Corsair CMSO32GX4M2A2133C15 16GB