Kingston ACR256X64D3S1333C9 2GB vs Patriot Memory (PDP Systems) 2133 C14 Series 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 31% 更低的延时

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 2133 C14 Series 8GB

报告一个错误

更快的读取速度，GB/s

13.7 11.9

测试中的平均数值
更快的写入速度，GB/s

9.4 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 39
读取速度，GB/s

11.9 13.7
写入速度，GB/s

8.5 9.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2397

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Ramaxel Technology RMUA5120MB86H9F2400 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Mushkin MRA4S320GJJM32G 32GB

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Samsung M378B5173EB0-CK0 4GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

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Corsair CM3X8GA2400C11Y2R 8GB

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SK Hynix HMA851S6CJR6N-XN 4GB

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Samsung M378B5673EH1-CF8 2GB

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Kingston KHX2133C14/16G 16GB

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Essencore Limited KD48GU88C-26N1600 8GB

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Crucial Technology BL8G30C15U4R.M8FE1 8GB

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Mushkin 99[2/7/4]200[F/T] 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston KST-2133MHZ-4G 4GB

Kingston KST-2133MHZ-4G 4GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Avexir Technologies Corporation DDR3 2400 CL10 4GB 4GB

Avexir Technologies Corporation DDR3 2400 CL10 4GB 4GB

G Skill Intl F4-3200C16-8GSXKB 8GB

G Skill Intl F4-3200C16-8GSXKB 8GB