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Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Kingston ACR256X64D3S1333C9 2GB vs Patriot Memory (PDP Systems) 2800 C18 Series 16GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 31
    左右 13% 更低的延时
Patriot Memory (PDP Systems) 2800 C18 Series 16GB 需要考虑的原因
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.2 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 31
  • 读取速度，GB/s
    11.9 left arrow 18.0
  • 写入速度，GB/s
    8.5 left arrow 15.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 3040

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
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内存RAM
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内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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SK Hynix HMA81GS6AFR8N-VK 8GB
内存RAM
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Elpida EBJ21UE8BDF0-DJ-F 2GB
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Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
内存RAM
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SK Hynix HMT325S6BFR8C-H9 2GB
Inmos + 256MB
Inmos + 256MB
内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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Apacer Technology GD2.1527WE.001 8GB
内存RAM
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Samsung M471A5143EB1-CRC 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3000C15-4GRR 4GB
G Skill Intl F4-3000C15-4GRR 4GB
内存RAM
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Kingston 99P5471-002.AOOLF 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
G Skill Intl F4-3600C16-32GTZN 32GB
G Skill Intl F4-3600C16-32GTZN 32GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
内存RAM