Kingston ACR256X64D3S1333C9 2GB vs SK Hynix V-GeN D4H4GL26A8TL5 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 53% 更低的延时

SK Hynix V-GeN D4H4GL26A8TL5 4GB

需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL5 4GB

报告一个错误

更快的读取速度，GB/s

17.7 11.9

测试中的平均数值
更快的写入速度，GB/s

9.3 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 58
读取速度，GB/s

11.9 17.7
写入速度，GB/s

8.5 9.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 1968

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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AMD R5316G1609U2K 8GB

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Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

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