Kingston ACR256X64D3S1333C9 2GB vs Super Talent F24EA8GS 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Super Talent F24EA8GS 8GB

Super Talent F24EA8GS 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 92

左右 71% 更低的延时
更快的读取速度，GB/s

11.9 11.6

测试中的平均数值

Super Talent F24EA8GS 8GB

需要考虑的原因
Super Talent F24EA8GS 8GB

报告一个错误

更快的写入速度，GB/s

9.7 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Super Talent F24EA8GS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 92
读取速度，GB/s

11.9 11.6
写入速度，GB/s

8.5 9.7
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 1776

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

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Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

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Kingston KHX2133C11D3/4GX 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

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ISD Technology Limited IM44GU48A30-GIIHM 4GB

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Corsair CML8GX3M2A1866C9 4GB

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

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Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Corsair CMK16GX4M2L3000C15 8GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200