Kingston ACR512X64D3S13C9G 4GB vs Chun Well Technology Holding Limited D4U0826190B 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Chun Well Technology Holding Limited D4U0826190B 8GB

Chun Well Technology Holding Limited D4U0826190B 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Chun Well Technology Holding Limited D4U0826190B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0826190B 8GB

报告一个错误

更快的读取速度，GB/s

16.7 11.5

测试中的平均数值
更快的写入速度，GB/s

12.9 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Chun Well Technology Holding Limited D4U0826190B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.5 16.7
写入速度，GB/s

8.5 12.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.A1GC6.9H10C 2GB

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Micron Technology 16ATF2G64AZ-2G6B1 16GB

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Kingston 99U5428-018.A00LF 8GB

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Memphis Electronic D4SO1G724GI-A58SD 8GB

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Samsung M378B5773DH0-CH9 2GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Samsung M378A1K43EB2-CVF 8GB

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Samsung M471A5244CB0-CWE 4GB

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Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T5663QZ3-CF7 2GB

Samsung M4 70T5663QZ3-CF7 2GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Hypertec G2RT-4AFT00 16GB

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AMD R538G1601U2S 8GB

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Netac Technology Co Ltd E40832A 8GB

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