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Kingston ACR512X64D3S13C9G 4GB
Corsair CMD16GX4M2B2400C10 8GB

Kingston ACR512X64D3S13C9G 4GB vs Corsair CMD16GX4M2B2400C10 8GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
Corsair CMD16GX4M2B2400C10 8GB

Corsair CMD16GX4M2B2400C10 8GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
Corsair CMD16GX4M2B2400C10 8GB 需要考虑的原因
Corsair CMD16GX4M2B2400C10 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.2 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.0 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
Corsair CMD16GX4M2B2400C10 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    11.5 left arrow 18.2
  • 写入速度，GB/s
    8.5 left arrow 14.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 3538

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

Corsair CMD16GX4M2B2400C10 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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G Skill Intl F4-3600C14-16GTRS 16GB
内存RAM
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SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
内存RAM
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G Skill Intl F4-4000C14-8GTZR 8GB
内存RAM
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内存RAM
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Samsung M471B5673FH0-CF8 2GB
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内存RAM