Kingston ACR512X64D3S13C9G 4GB vs Corsair CMK32GX4M2D3600C18 16GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Corsair CMK32GX4M2D3600C18 16GB

Corsair CMK32GX4M2D3600C18 16GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Corsair CMK32GX4M2D3600C18 16GB

需要考虑的原因
Corsair CMK32GX4M2D3600C18 16GB

报告一个错误

更快的读取速度，GB/s

17.8 11.5

测试中的平均数值
更快的写入速度，GB/s

14.8 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Corsair CMK32GX4M2D3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.5 17.8
写入速度，GB/s

8.5 14.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1756 3597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Kingston MSI24D4S7S8MH-8 8GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M378A1G44BB0-CWE 8GB

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Samsung M474A1G43DB0-CPB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

Wilk Elektronik S.A. GR3200S464L22/16G 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 9905702-082.A00G 8GB

Kingston 9905702-082.A00G 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Samsung 18ASF1G72PDZ-2G1B1 16GB

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SK Hynix HMT351U6CFR8C-H9 4GB

Avant Technology J642GU42J7240NF 16GB

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