Kingston ACR512X64D3S13C9G 4GB vs G Skill Intl F4-3600C18-8GTRG 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

G Skill Intl F4-3600C18-8GTRG 8GB

需要考虑的原因
G Skill Intl F4-3600C18-8GTRG 8GB

报告一个错误

更快的读取速度，GB/s

17.6 11.5

测试中的平均数值
更快的写入速度，GB/s

15.5 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-3600C18-8GTRG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

11.5 17.6
写入速度，GB/s

8.5 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1756 3683

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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A-DATA Technology ADOVE1A0834E 1GB

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V-GEN D4H4GL30A8TS5 4GB

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Samsung DDR3 8GB 1600MHz 8GB

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Corsair CMD32GX4M2A2666C15 16GB

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A-DATA Technology DQVE1908 512MB

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Ramaxel Technology RMT1970ED48E8F1066 2GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Apacer Technology 78.C1GMW.AZC0B 8GB

Apacer Technology 78.C1GMW.AZC0B 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Samsung M393A2K40CB2-CTD 16GB

Samsung M393A2K40CB2-CTD 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Samsung M471A1K43CB1-CRC 8GB

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Kingston 9965525-018.A00LF 4GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB

Micron Technology 18ADF2G72AZ-2G3A1 16GB