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Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3600C19-16GTRG 16GB

Kingston ACR512X64D3S13C9G 4GB vs G Skill Intl F4-3600C19-16GTRG 16GB

总分
star star star star star
Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分
star star star star star
G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB

差异 规格 评论

差异

Kingston ACR512X64D3S13C9G 4GB 需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB
报告一个错误
G Skill Intl F4-3600C19-16GTRG 16GB 需要考虑的原因
G Skill Intl F4-3600C19-16GTRG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 27
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    19.4 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3600C19-16GTRG 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 25
  • 读取速度，GB/s
    11.5 left arrow 19.4
  • 写入速度，GB/s
    8.5 left arrow 16.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1756 left arrow 3933

Kingston ACR512X64D3S13C9G 4GB RAM的比较

TwinMOS 9DPT1CO4E-TATP 8GB
Samsung M393B1K70DH0-YH9 8GB

G Skill Intl F4-3600C19-16GTRG 16GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Crucial Technology CT16G4SFRA32A.C8FE 16GB
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内存RAM
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Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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内存RAM
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内存RAM
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Corsair CMD16GX4M2B3466C16 8GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
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Corsair CMSO8GX3M1C1600C11 8GB
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