Kingston ACR512X64D3S13C9G 4GB vs G Skill Intl F4-4000C14-8GTZR 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

G Skill Intl F4-4000C14-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-4000C14-8GTZR 8GB

报告一个错误

更快的读取速度，GB/s

24.7 11.5

测试中的平均数值
更快的写入速度，GB/s

19.9 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-4000C14-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

11.5 24.7
写入速度，GB/s

8.5 19.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1756 4174

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB

Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

SK Hynix HMA82GU6AFR8N-UH 16GB

SK Hynix HMA82GU6AFR8N-UH 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK16GX4M2A2666C18 8GB

Corsair CMK16GX4M2A2666C18 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Kingmax Semiconductor GLAF62F-D8---------- 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

G Skill Intl F4-3400C16-4GRBD 4GB

G Skill Intl F4-3400C16-4GRBD 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

V-GEN D4H4GL26A8TS5 4GB

V-GEN D4H4GL26A8TS5 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3400C16-16GVR 16GB

G Skill Intl F4-3400C16-16GVR 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-3000C15-16GTZ 16GB

G Skill Intl F4-3000C15-16GTZ 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

Essencore Limited IM48GU88A30-FGGHMZ 8GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M378A4G43AB2-CWE 32GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Micron Technology 16ATF2G64AZ-2G6B1 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240