Kingston ACR512X64D3S13C9G 4GB vs Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

需要考虑的原因
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 27

左右 -42% 更低的延时
更快的读取速度，GB/s

19.4 11.5

测试中的平均数值
更快的写入速度，GB/s

14.5 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 19
读取速度，GB/s

11.5 19.4
写入速度，GB/s

8.5 14.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 15
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1756 3290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M471A1K43CB1-CRC 8GB

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Crucial Technology CT8G4DFS8266.C8FN 8GB

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Kingston 9905458-017.A01LF 4GB

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Apacer Technology 76.D305G.D060B 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

AMD AE34G1601U1 4GB

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Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology CT32G4DFD8266.C16FE 32GB

Crucial Technology CT32G4DFD8266.C16FE 32GB