Kingston HP669238-071-HYC 4GB vs Kingston KF3000C15D4/8GX 8GB

总分

Kingston HP669238-071-HYC 4GB

Kingston HP669238-071-HYC 4GB

总分

Kingston KF3000C15D4/8GX 8GB

Kingston KF3000C15D4/8GX 8GB

差异规格评论

差异

Kingston HP669238-071-HYC 4GB

需要考虑的原因
Kingston HP669238-071-HYC 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 32

左右 22% 更低的延时

Kingston KF3000C15D4/8GX 8GB

需要考虑的原因
Kingston KF3000C15D4/8GX 8GB

报告一个错误

更快的读取速度，GB/s

18.7 11.3

测试中的平均数值
更快的写入速度，GB/s

13.9 5.5

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Kingston HP669238-071-HYC 4GB

Kingston KF3000C15D4/8GX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 32
读取速度，GB/s

11.3 18.7
写入速度，GB/s

5.5 13.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1913 3277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T3354BZ0-CCC 256MB

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Samsung M471A1K43DB1-CWE 8GB

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Samsung M393B2G70BH0-CH9 16GB

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Micron Technology 18ASF2G72PDZ-2G3A1 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Apacer Technology 78.CAGP7.AFW0C 8GB

Apacer Technology 78.CAGP7.AFW0C 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston XJV223-MIE-NX 16GB

Kingston XJV223-MIE-NX 16GB