Kingston HP698651-154-MCN 8GB vs G Skill Intl F4-4266C19-4GTZ 4GB

总分

Kingston HP698651-154-MCN 8GB

Kingston HP698651-154-MCN 8GB

总分

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

差异规格评论

差异

Kingston HP698651-154-MCN 8GB

需要考虑的原因
Kingston HP698651-154-MCN 8GB

报告一个错误

G Skill Intl F4-4266C19-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-4266C19-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 26

左右 -44% 更低的延时
更快的读取速度，GB/s

20.3 11.8

测试中的平均数值
更快的写入速度，GB/s

17.8 6.4

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Kingston HP698651-154-MCN 8GB

G Skill Intl F4-4266C19-4GTZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 18
读取速度，GB/s

11.8 20.3
写入速度，GB/s

6.4 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2003 3507

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

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G Skill Intl F4-2400C17-8GISM 8GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Samsung M471A1K43DB1-CTD 8GB

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Samsung M471B5273DH0-CH9 4GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

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Kingston 9965525-018.A00LF 4GB

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Micron Technology 16ATF4G64HZ-3G2E1 32GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Mushkin MR[A/B]4U346GJJM8G 8GB

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