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Kingston HX316C10F/8 8GB
Corsair CMK64GX4M4B3600C18 16GB

Kingston HX316C10F/8 8GB vs Corsair CMK64GX4M4B3600C18 16GB

总分
star star star star star
Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

总分
star star star star star
Corsair CMK64GX4M4B3600C18 16GB

Corsair CMK64GX4M4B3600C18 16GB

差异 规格 评论

差异

Kingston HX316C10F/8 8GB 需要考虑的原因
Kingston HX316C10F/8 8GB
报告一个错误
Corsair CMK64GX4M4B3600C18 16GB 需要考虑的原因
Corsair CMK64GX4M4B3600C18 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 36
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston HX316C10F/8 8GB
Corsair CMK64GX4M4B3600C18 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 35
  • 读取速度，GB/s
    14.7 left arrow 16.1
  • 写入速度，GB/s
    9.2 left arrow 14.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2585 left arrow 3423

Kingston HX316C10F/8 8GB RAM的比较

Smart Modular SH5641G8FJ8NWRNSQG 8GB
Avant Technology F6451U66G1600G 4GB

Corsair CMK64GX4M4B3600C18 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Shenzhen Xingmem Technology Corp 16GB
Shenzhen Xingmem Technology Corp 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9905625-036.A00G 16GB
Kingston 9905625-036.A00G 16GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
Crucial Technology CT4G4DFS8213.C8FAD11 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Essencore Limited KD4AGU880-36A180U 16GB
Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK16GX4M4B3000C15 4GB
Corsair CMK16GX4M4B3000C15 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Corsair CMK64GX4M8A2666C16 8GB
Corsair CMK64GX4M8A2666C16 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
内存RAM
Corsair CMX4GX3M1A1333C9 4GB
Corsair CMX4GX3M1A1333C9 4GB
V-GEN D4H8GL26A8TS6 8GB
V-GEN D4H8GL26A8TS6 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
Crucial Technology BLS8G4D240FSE.M16FAD 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix GKE160UD102408-2400 16GB
SK Hynix GKE160UD102408-2400 16GB
内存RAM