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Kingston HX316C10F/8 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Kingston HX316C10F/8 8GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

总分
star star star star star
Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

差异 规格 评论

差异

Kingston HX316C10F/8 8GB 需要考虑的原因
Kingston HX316C10F/8 8GB
报告一个错误
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 36
    左右 -38% 更低的延时
  • 更快的读取速度，GB/s
    15.5 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston HX316C10F/8 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 26
  • 读取速度，GB/s
    14.7 left arrow 15.5
  • 写入速度，GB/s
    9.2 left arrow 10.2
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2585 left arrow 2486

Kingston HX316C10F/8 8GB RAM的比较

Smart Modular SH5641G8FJ8NWRNSQG 8GB
Avant Technology F6451U66G1600G 4GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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