RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston HX316C10F/8 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
比较
Kingston HX316C10F/8 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
总分
Kingston HX316C10F/8 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Kingston HX316C10F/8 8GB
报告一个错误
更快的读取速度,GB/s
14.7
14.5
测试中的平均数值
更快的写入速度,GB/s
9.2
9.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
36
左右 -20% 更低的延时
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Kingston HX316C10F/8 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
36
30
读取速度,GB/s
14.7
14.5
写入速度,GB/s
9.2
9.0
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2585
2374
Kingston HX316C10F/8 8GB RAM的比较
Smart Modular SH5641G8FJ8NWRNSQG 8GB
Avant Technology F6451U66G1600G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston HX316C10F/8 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C16-4GRB 4GB
Kingston 99U5429-014.A00LF 4GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
SpecTek Incorporated ?????????????????? 2GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M3 78T2863QZS-CF7 1GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Samsung M471B5273CH0-CH9 4GB
Kingston 9965643-006.A01G 8GB
Qimonda 72T128420EFA3SB2 1GB
V-Color Technology Inc. TL48G32S8KGRGB16 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL16G32C16U4B.M16FE 16GB
Super Talent STT-WB160CL0901 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMW32GX4M4K4000C19 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-3000C15-4GVRB 4GB
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C16-4GVRB 4GB
Kingston ACR16D3LS1NGG/2G 2GB
G Skill Intl F4-3000C14-16GVK 16GB
报告一个错误
×
Bug description
Source link