Kingston HX318C10FK/4 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

总分

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

差异规格评论

差异

Kingston HX318C10FK/4 4GB

需要考虑的原因
Kingston HX318C10FK/4 4GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 69

左右 -156% 更低的延时
更快的读取速度，GB/s

15.2 6.1

测试中的平均数值
更快的写入速度，GB/s

10.2 4.1

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Kingston HX318C10FK/4 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

69 27
读取速度，GB/s

6.1 15.2
写入速度，GB/s

4.1 10.2
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1116 2764

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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