Kingston HX426C16FB2/8-SP 8GB vs Kingston ACR32D4U2S8ME-16 16GB

总分

Kingston HX426C16FB2/8-SP 8GB

Kingston HX426C16FB2/8-SP 8GB

总分

Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB

差异规格评论

差异

Kingston HX426C16FB2/8-SP 8GB

需要考虑的原因
Kingston HX426C16FB2/8-SP 8GB

报告一个错误

Kingston ACR32D4U2S8ME-16 16GB

需要考虑的原因
Kingston ACR32D4U2S8ME-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 50

左右 -47% 更低的延时
更快的读取速度，GB/s

17.2 10

测试中的平均数值
更快的写入速度，GB/s

12.1 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 21300

左右 1.2 更高的带宽

规格

完整的技术规格清单

Kingston HX426C16FB2/8-SP 8GB

Kingston ACR32D4U2S8ME-16 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

50 34
读取速度，GB/s

10.0 17.2
写入速度，GB/s

7.8 12.1
内存带宽，mbps

21300 25600

Other

描述

PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2159 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramos Technology EWB8GB681CA3-16IC 8GB

Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB

Samsung M393B5270CH0-CH9 4GB

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G Skill Intl F4-3200C16-8GTRG 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB