Kingston K1N7HK-ELC 2GB vs G Skill Intl F4-3600C19-8GSXF 8GB

总分

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

总分

G Skill Intl F4-3600C19-8GSXF 8GB

G Skill Intl F4-3600C19-8GSXF 8GB

差异规格评论

差异

Kingston K1N7HK-ELC 2GB

需要考虑的原因
Kingston K1N7HK-ELC 2GB

报告一个错误

G Skill Intl F4-3600C19-8GSXF 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXF 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 26

左右 -44% 更低的延时
更快的读取速度，GB/s

20.3 12.6

测试中的平均数值
更快的写入速度，GB/s

14.6 7.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston K1N7HK-ELC 2GB

G Skill Intl F4-3600C19-8GSXF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 18
读取速度，GB/s

12.6 20.3
写入速度，GB/s

7.7 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1820 3431

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J641GU42J5213ND 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Corsair CMK8GX4M2A2800C16 4GB

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AMD R948G3206U2S 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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A-DATA Technology VDQVE1B16 2GB

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SK Hynix V-GeN D4H4GL26A8TL 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Kingston KHX1866C9D3/8GX 8GB

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Crucial Technology CT8G4SFD824A.C16FBD2 8GB

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Patriot Memory (PDP Systems) PSD34G133381 4GB

Patriot Memory (PDP Systems) PSD34G133381 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston 9905471-081.A00LF 8GB

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB