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Kingston K531R8-MIN 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Kingston K531R8-MIN 4GB vs Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB 需要考虑的原因
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 28
    左右 -12% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 25
  • 读取速度，GB/s
    13.4 left arrow 15.4
  • 写入速度，GB/s
    9.0 left arrow 13.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 2786

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
G Skill Intl F4-3000C16-8GSXFB 8GB
G Skill Intl F4-3000C16-8GSXFB 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston KP6FH5-MIE 32GB
Kingston KP6FH5-MIE 32GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston KF3600C16D4/8GX 8GB
Kingston KF3600C16D4/8GX 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-4000C18-32GTZR 32GB
G Skill Intl F4-4000C18-32GTZR 32GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.C2GFK.AR20B 8GB
Apacer Technology 78.C2GFK.AR20B 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin MR[A/B]4U300JJJM16G 16GB
Mushkin MR[A/B]4U300JJJM16G 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Essencore Limited KD48GU880-36A180U 8GB
Essencore Limited KD48GU880-36A180U 8GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
G Skill Intl F4-2133C15-8GRB 8GB
G Skill Intl F4-2133C15-8GRB 8GB
内存RAM