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Kingston K531R8-MIN 4GB
G Skill Intl F4-3466C16-8GTZSK 8GB

Kingston K531R8-MIN 4GB vs G Skill Intl F4-3466C16-8GTZSK 8GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
G Skill Intl F4-3466C16-8GTZSK 8GB 需要考虑的原因
G Skill Intl F4-3466C16-8GTZSK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 28
    左右 -47% 更低的延时
  • 更快的读取速度，GB/s
    20 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
G Skill Intl F4-3466C16-8GTZSK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 19
  • 读取速度，GB/s
    13.4 left arrow 20.0
  • 写入速度，GB/s
    9.0 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 3383

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMV4GX3M1B1600C11 4GB
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JUHOR JHD2666U1908JG 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Kingston 99U5702-020.A00G 8GB
Kingston 99U5702-020.A00G 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
A-DATA Technology AO1E34RCSV1-BD7S 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
内存RAM
Kingston RB16D3LS1KBG/4G 4GB
Kingston RB16D3LS1KBG/4G 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
SpecTek Incorporated 16G 2666 CL 19 16GB
SpecTek Incorporated 16G 2666 CL 19 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston HP32D4U2S8MR-8 8GB
Kingston HP32D4U2S8MR-8 8GB
内存RAM