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Kingston K531R8-MIN 4GB
SK Hynix HMA851S6CJR6N-VK 4GB

Kingston K531R8-MIN 4GB vs SK Hynix HMA851S6CJR6N-VK 4GB

总分
star star star star star
Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分
star star star star star
SK Hynix HMA851S6CJR6N-VK 4GB

SK Hynix HMA851S6CJR6N-VK 4GB

差异 规格 评论

差异

Kingston K531R8-MIN 4GB 需要考虑的原因
Kingston K531R8-MIN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 37
    左右 24% 更低的延时
SK Hynix HMA851S6CJR6N-VK 4GB 需要考虑的原因
SK Hynix HMA851S6CJR6N-VK 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.6 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Kingston K531R8-MIN 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 37
  • 读取速度，GB/s
    13.4 left arrow 15.4
  • 写入速度，GB/s
    9.0 left arrow 11.6
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2445 left arrow 2321

Kingston K531R8-MIN 4GB RAM的比较

Samsung M471A5244CB0-CWE 4GB
Shenzhen Yong Sheng Technology YXS1866C10D3/8G 8GB

SK Hynix HMA851S6CJR6N-VK 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378B5173BH0-CH9 4GB
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Samsung M378A2K43CB1-CRC 16GB
内存RAM
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内存RAM
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Kingston 2GB-DDR2 800Mhz 2GB
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内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM
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A-DATA Technology AO1P32NC8T1-BCSS 8GB
内存RAM
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TwinMOS 8DPT5MK8-TATP 2GB
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Crucial Technology CT8G4DFS8213.M8FH 8GB
内存RAM