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Kingston KF3600C17D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB vs Kingston KHX3200C16D4/8GX 8GB

总分
star star star star star
Kingston KF3600C17D4/8GX 8GB

Kingston KF3600C17D4/8GX 8GB

总分
star star star star star
Kingston KHX3200C16D4/8GX 8GB

Kingston KHX3200C16D4/8GX 8GB

差异 规格 评论

差异

Kingston KF3600C17D4/8GX 8GB 需要考虑的原因
Kingston KF3600C17D4/8GX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.4 left arrow 18.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.2 left arrow 14.6
    测试中的平均数值
Kingston KHX3200C16D4/8GX 8GB 需要考虑的原因
Kingston KHX3200C16D4/8GX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 -14% 更低的延时

规格

完整的技术规格清单
Kingston KF3600C17D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    32 left arrow 28
  • 读取速度，GB/s
    20.4 left arrow 18.3
  • 写入速度，GB/s
    15.2 left arrow 14.6
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3483 left arrow 3474

Kingston KF3600C17D4/8GX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston KHX3200C16D4/8GX 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Mushkin 99[2/7/4]200F 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Apacer Technology 78.CAGQ7.ARC0B 8GB
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内存RAM
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Samsung M474A2K43BB1-CPB 16GB
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Samsung M471B5273EB0-CK0 4GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
内存RAM
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Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C15-4GRR 4GB
G Skill Intl F4-2400C15-4GRR 4GB
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Kingston 9965640-004.C00G 16GB
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Samsung M393A2G40DB1-CRC 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-4GTZ 4GB
G Skill Intl F4-3200C16-4GTZ 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
Kingston 8ATF1G64AZ-2G1B1 8GB
内存RAM
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F3-1600C11-4GIS 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3333C16-4GRKD 4GB
G Skill Intl F4-3333C16-4GRKD 4GB
内存RAM