RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KF552C40-16 16GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
比较
Kingston KF552C40-16 16GB vs Crucial Technology CT8G4SFD824A.C16FBD2 8GB
总分
Kingston KF552C40-16 16GB
总分
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston KF552C40-16 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
90
左右 67% 更低的延时
更快的读取速度,GB/s
15.5
14.6
测试中的平均数值
更快的写入速度,GB/s
13.2
7.5
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
报告一个错误
规格
完整的技术规格清单
Kingston KF552C40-16 16GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
主要特点
存储器类型
DDR5
DDR4
PassMark中的延时,ns
30
90
读取速度,GB/s
15.5
14.6
写入速度,GB/s
13.2
7.5
内存带宽,mbps
19200
19200
Other
描述
PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
no data / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3343
1546
Kingston KF552C40-16 16GB RAM的比较
Kingston KF560C40-16 16GB
G Skill Intl F4-3000C15-8GRK 8GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KF552C40-16 16GB
Crucial Technology CT8G4SFD824A.C16FBD2 8GB
G Skill Intl F5-6400J3239G16G 16GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
Samsung M393B1G70BH0-YK0 8GB
Samsung M378A1K43BB2-CRC 8GB
Team Group Inc. UD5-6400 16GB
Crucial Technology CT8G4SFS824A.C8FBR1 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
SK Hynix GKE800SO102408-2400 8GB
Kingston 9905403-447.A00LF 4GB
Shenzen Recadata Storage Technology 8GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3866C18-4GTZ 4GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.CAGNT.4050B 8GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-3000C14-16GTZ 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-2400C16-4GRS 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-3200C16-16GTZN 16GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Samsung M378B5273EB0-CK0 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
报告一个错误
×
Bug description
Source link